Diamond vacuum field emission devices

被引：32
|
作者：
Kang, WP
Davidson, JL
Wisitsora-At, A
Wong, YM
Takalkar, R
Holmes, K
Kerns, DV
机构：
[1] Vanderbilt Univ, Dept Elect Engn, Nashville, TN 37235 USA
[2] Olin Coll Engn, Needham, MA 02492 USA
来源：
DIAMOND AND RELATED MATERIALS | 2004年 / 13卷 / 11-12期
关键词：
diamond; field emission; high current; DC gain; lateral field emitter;
D O I：
10.1016/j.diamond.2004.07.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This article reports the development of (a) vertical and (b) lateral diamond vacuum field emission devices with excellent field emission characteristics. These diamond field emission devices, diode and triode, were fabricated using a self-aligning gate formation technique from silicon-on-insulator wafers using conventional silicon micropatteming and etching techniques. High emission current >0.1 Awas achieved from the vertical diamond field emission diode with an indented anode design. The gated diamond triode in vertical configuration displayed excellent transistor characteristics with high DC gain of similar to800 and large AC output voltage of similar to100 V p-p. Lateral diamond field emission diodes with cathode-anode spacing less than 2 lmi were fabricated. The lateral diamond emitter exhibited a low turn-on voltage of similar to.5 V and a high emission current of 6 muA. The low turn-on voltage (field similar to3 V/mum) and high emission characteristics are the best of reported lateral field emitter structures. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：1944 / 1948
页数：5
相关论文
共 50 条
  • [1] Diamond vacuum field emission devices
    Kang, W
    Davidson, JL
    Wong, YM
    Holmes, K
    DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) : 975 - 981
  • [2] Diamond field emission devices
    Davidson, JL
    Kang, WP
    Wisitsora-At, A
    DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 429 - 433
  • [3] Lifetime and stability of diamond field emission devices
    Fink, RL
    Thuesen, LH
    Tolt, ZL
    Yaniv, Z
    DIAMOND FILMS AND TECHNOLOGY, 1998, 8 (06): : 435 - 440
  • [4] Nanodiamond Vacuum Field Emission Integrated Devices
    Kang, W. P.
    Hsu, S. H.
    Ghosh, N.
    Davidson, J. L.
    Huang, J. H.
    Kerns, D. V.
    2012 25TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2012, : 88 - +
  • [5] Diamond and boron carbide field emission in medium vacuum
    Melmed, Allan J.
    SURFACE AND INTERFACE ANALYSIS, 2007, 39 (2-3) : 123 - 127
  • [6] Breakdown in conventional and vacuum microelectronics field emission devices
    Charbonnier, F
    IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996, : 10 - 18
  • [7] Diamond Photocathodes As Field-Emission Electrodes for Vacuum Microelectronics
    Il'ichev, E. A.
    Kuleshov, A. E.
    Petrukhin, G. N.
    Minakov, P., V
    Rychkov, G. S.
    Sen, V. V.
    Teverovskaya, E. G.
    TECHNICAL PHYSICS LETTERS, 2021, 47 (07) : 503 - 506
  • [8] Diamond Photocathodes As Field-Emission Electrodes for Vacuum Microelectronics
    E. A. Il’ichev
    A. E. Kuleshov
    G. N. Petrukhin
    P. V. Minakov
    G. S. Rychkov
    V. V. Sen’
    E. G. Teverovskaya
    Technical Physics Letters, 2021, 47 : 503 - 506
  • [9] Utilization of carbon nanotube and diamond for electron field emission devices
    Minh, PN
    Hong, PN
    Cuong, TM
    Ono, T
    Esashi, M
    MEMS 2004: 17TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 2004, : 430 - 433
  • [10] Review on peculiar issues of field emission in vacuum nanoelectronic devices
    Filip, Valeriu
    Filip, Lucian Dragos
    Wong, Hei
    SOLID-STATE ELECTRONICS, 2017, 138 : 3 - 15
12345