Solution synthesis of pure 2H CuFeO2 at low temperatures

Pure 2H CuFeO2 nanoplates with a thickness of about 100 nm were synthesized at temperatures as low as 100 degrees C from CuI and FeCl3 center dot 6H(2)O. Systematic studies revealed that the formation of 2H CuFeO2 was affected by reactant concentrations, basicity, temperature and the reaction time. The material was characterized by powder X-ray diffraction, electron microscopy, Raman and absorption spectroscopy. 2H CuFeO2 has a band gap of 1.33 eV, high absorption coefficient of 3.8 x 10(4) cm(-1) at 700 nm and is highly photostable. When incorporated into an indium tin oxide/ZnO/2H CuFeO2/graphite/carbon black structure an open circuit photovoltage of 0.29 V was observed. The material appears promising for solar applications.