Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer

被引：5
|
作者：
Jeon, Jihee [1 ]
Asano, Takanori [1 ,2 ]
Shimura, Yosuke [1 ]
Takeuchi, Wakana [1 ]
Kurosawa, Masashi [1 ,3 ]
Sakashita, Mitsuo [1 ]
Nakatsuka, Osamu [1 ]
Zaima, Shigeaki [1 ,3 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan
[2] Japan Soc Promot Sci, Chiyoda Ku, Tokyo 1020083, Japan
[3] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期
关键词：
MOLECULAR-BEAM EPITAXY; GERMANIUM; ACTIVATION; SURFACE; GROWTH; GE;
D O I：
10.7567/JJAP.55.04EB13
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We examined the molecular beam epitaxy of Ge1-xSnx with in situ Sb doping on Ge substrates. The effects of Sb doping on the crystalline and electrical characteristics of Ge1-xSnx epitaxial layer were investigated in detail. We found that Sb doping with a concentration of 10(20) cm(-3) remarkably improves the crystallinity, and surface uniformity of the Ge1-xSnx epitaxial layer by changing the growth mode by the surfactant effect of Sb atoms. Low-temperature Ge1-xSnx growth with in situ Sb doping realizes a very high electron concentration of 10(20) cm(-3), which is above the thermal equilibrium solid solubility, as a result of suppressing Sb segregation and precipitation. (C) 2016 The Japan Society of Applied Physics
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页数：5
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