A compact LTCC-based Ku-band transmitter module

被引:55
作者
Lee, CH [1 ]
Sutono, A
Han, S
Lim, K
Pinel, S
Tentzeris, EM
Laskar, J
机构
[1] RF Solut Inc, Norcross, GA 30071 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Yamacraw Design Ctr, Packaging Res Ctr, Atlanta, GA 30332 USA
[3] Infinera Inc, Sunnyvale, CA 94089 USA
[4] RF Solut Inc, Norcross, GA 30071 USA
来源
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2002年 / 25卷 / 03期
关键词
ACPR; coupled line filter; DBS; dual gate mixer; Ku-band; LTCC; MESFET; MMIC; negative resistance VCO; power amplifier; satellite communications; SOP; transmitter; up-converter;
D O I
10.1109/TADVP.2002.805315
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we present design, implementation, and measurement of a three-dimensional (3-D)-deployed RF front-end system-on-package (SOP) in a standard multi-layer low temperature co-fired ceramic (LTCC technology. A compact 14 GHz GaAs MESFET-based transmitter module integrated with an embedded band pass filter was built on LTCC 951AT tapes. The up-converter MMIC integrated with a voltage controlled oscillator (VCO) exhibits a measured up-conversion gain of 15 dB and an IIP3 of 15 dBm, while the power amplifier (PA) MIMIC shows a measured gain of 31 dB and a 1-dB compression output power of 26 dBm at 14 GHz. Both MMICs were integrated on a compact LTCC module where an embedded front-end band pass filter (BPF) with a measured insertion loss of 3 dB at 14.25 GHz was integrated. The transmitter module is compact in size (400 x 310 x 35.2 mil(3)), however it demonstrated an overall up-conversion gain of 41 dB, and available data rate of 32 Mbps with adjacent channel power ratio (ACPR) of 42 dB. These results suggest the feasibility of building highly SOP integrated RF front ends for microwave and millimeter wave applications.
引用
收藏
页码:374 / 384
页数:11
相关论文
共 12 条
  • [1] Cohn S.B., 1958, IRE T MICROWAVE THEO, P223, DOI DOI 10.1109/TMTT.1958.1124542
  • [2] Evans J. V., 1998, P IEEE AER C, V4, P525
  • [3] FUJII K, P 1998 IEEE RFIC BAL, P77
  • [4] GIPPRICH JW, P 1993 IEEE MTT S IN, V3, P1369
  • [5] *IESS, 2002, IESS208
  • [6] Jones E.M. T., 1956, MICROWAVE THEORY TEC, V4, P75
  • [7] A low phase noise X-band MMIC GaAs MESFET VCO
    Lee, CH
    Han, S
    Matinpour, B
    Laskar, J
    [J]. IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (08): : 325 - 327
  • [8] LESTER JA, 1995, IEEE 1995 MICROWAVE AND MILLIMETER-WAVE MONOLITHIC CIRCUITS SYMPOSIUM - DIGEST OF PAPERS, P35, DOI 10.1109/MCS.1995.470996
  • [9] SIMON W, P 2000 IEEE MTT S IN, V2, P1047
  • [10] *SONN SOFTW INC, EM US MAN