In situ extended X-ray absorption fine structure study on the local structure around gallium in liquid silicon

被引：3

作者：

Shinohara, AH

Omote, K

Kawanishi, S

Waseda, Y

机构：

[1] TOHOKU UNIV,INST ADV MAT PROC,SENDAI,MIYAGI 98077,JAPAN

[2] RES DEV CORP JAPAN,ERATO,KIMURA METAMELT PROJECT,TAIHAKU KU,SENDAI,MIYAGI 982,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 4A期

关键词：

liquid silicon; local structure; gallium impurity; high temperature; EXAFS;

D O I：

10.1143/JJAP.35.2218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The local structure around gallium of 0.5, 1 and 5 at.% in Liquid silicon at 1440 degrees C has been investigated by the extended X-ray absorption fine structure (EXAFS). The amplitude of EXAFS oscillations is distinct for the very dilute case of 0.5 at.% gallium. The EXAFS analysis shows that the structural parameters of Ga-Si pairs change from 2.8 atoms at a distance of 2.36 Angstrom to 2.1 atoms at a distance of 2.43 Angstrom with increasing gallium content in liquid silicon. These results suggest that a certain local structure around gallium in liquid silicon is formed at low gallium content and that this structural feature disappears with increasing gallium content.

引用

页码：2218 / 2221

页数：4

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