In situ extended X-ray absorption fine structure study on the local structure around gallium in liquid silicon

被引：3
|
作者：
Shinohara, AH
Omote, K
Kawanishi, S
Waseda, Y
机构：
[1] TOHOKU UNIV,INST ADV MAT PROC,SENDAI,MIYAGI 98077,JAPAN
[2] RES DEV CORP JAPAN,ERATO,KIMURA METAMELT PROJECT,TAIHAKU KU,SENDAI,MIYAGI 982,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 4A期
关键词：
liquid silicon; local structure; gallium impurity; high temperature; EXAFS;
D O I：
10.1143/JJAP.35.2218
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The local structure around gallium of 0.5, 1 and 5 at.% in Liquid silicon at 1440 degrees C has been investigated by the extended X-ray absorption fine structure (EXAFS). The amplitude of EXAFS oscillations is distinct for the very dilute case of 0.5 at.% gallium. The EXAFS analysis shows that the structural parameters of Ga-Si pairs change from 2.8 atoms at a distance of 2.36 Angstrom to 2.1 atoms at a distance of 2.43 Angstrom with increasing gallium content in liquid silicon. These results suggest that a certain local structure around gallium in liquid silicon is formed at low gallium content and that this structural feature disappears with increasing gallium content.
引用
收藏
页码：2218 / 2221
页数：4
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