Study and Optimization of Characteristics of GaN based Quantum Well Light Emitting Diode

被引：0

作者：

Jha, Chandan Kumar ^{[1
]}

Vikas ^{[1
]}

Pandey, Saurabh Kumar ^{[2
]}

机构：

[1] Natl Inst Technol, Dept Elect & Commun Engn, Hamirpur, HP, India

[2] Indian Inst Technol, Dept Elect Engn, Patna, Bihar, India

来源：

PROCEEDINGS OF THE FIRST IEEE INTERNATIONAL CONFERENCE ON POWER ELECTRONICS, INTELLIGENT CONTROL AND ENERGY SYSTEMS (ICPEICES 2016) | 2016年

关键词：

LED; MQW; IQE; EBL;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Effect of number of wells with different thicknesses of P layer on Internal Quantum Efficiency(IQE), I-V relationship, Power current, and spontaneous rate of blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) is simulated and investigated with the help of APSYS software. Result reveals that LED with single Quantum well and thin P type Electron Blocking Layer (EBL) gives significantly good result for low injection level. For high injection level thick EBL and multiple Quantum well gives better result. At low injection level LED with single Quantum well shows IQE around 98.20 %.

引用

页数：4

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