Effect of Annealing on Off-Diagonal GMI Effect of Co-Rich Amorphous Microwires

被引：1

作者：

Zhukov, Arcady ^{[1
,2
]}

Ipatov, Mihail ^{[1
]}

Talaat, Ahmed ^{[1
]}

Blanco, Juan M. ^{[3
]}

Zhukova, Valentina ^{[1
]}

机构：

[1] Univ Basque Country, Dept Phys Mat, San Sebastian 20018, Spain

[2] Ikerbasque, Basque Fdn Sci, E-48011 Bilbao, Spain

[3] Univ Basque Country, Dept Fis Aplicada 1, Escuela Univ Politecn, San Sebastian 20018, Spain

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2014年 / 50卷 / 11期

关键词：

Amorphous microwires; annealing; giant magnetoimpedance (GMI) effect; magnetic anisotropy; MAGNETOELASTIC ANISOTROPY; GIANT MAGNETOIMPEDANCE; MAGNETIC-FIELD; MAGNETOSTRICTION; MANIPULATION; DEPENDENCE; IMPEDANCE; WIRES;

D O I：

10.1109/TMAG.2014.2318082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied giant magnetoimpedance (GMI) effect and magnetic properties of Co69.2Fe4.1B11.8Si13.8C1.1 amorphous as-prepared and annealed microwires. We observed that these properties can be tuned by heat treatment. High GMI effect has been observed in as-prepared Co-rich microwires. After appropriate annealing, we can observe fast DW propagation and GMI effect in the same sample. Annealing affects both diagonal and off-diagonal GMI components.

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页数：4

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