Effect of Annealing on Off-Diagonal GMI Effect of Co-Rich Amorphous Microwires

被引:1
作者
Zhukov, Arcady [1 ,2 ]
Ipatov, Mihail [1 ]
Talaat, Ahmed [1 ]
Blanco, Juan M. [3 ]
Zhukova, Valentina [1 ]
机构
[1] Univ Basque Country, Dept Phys Mat, San Sebastian 20018, Spain
[2] Ikerbasque, Basque Fdn Sci, E-48011 Bilbao, Spain
[3] Univ Basque Country, Dept Fis Aplicada 1, Escuela Univ Politecn, San Sebastian 20018, Spain
关键词
Amorphous microwires; annealing; giant magnetoimpedance (GMI) effect; magnetic anisotropy; MAGNETOELASTIC ANISOTROPY; GIANT MAGNETOIMPEDANCE; MAGNETIC-FIELD; MAGNETOSTRICTION; MANIPULATION; DEPENDENCE; IMPEDANCE; WIRES;
D O I
10.1109/TMAG.2014.2318082
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We studied giant magnetoimpedance (GMI) effect and magnetic properties of Co69.2Fe4.1B11.8Si13.8C1.1 amorphous as-prepared and annealed microwires. We observed that these properties can be tuned by heat treatment. High GMI effect has been observed in as-prepared Co-rich microwires. After appropriate annealing, we can observe fast DW propagation and GMI effect in the same sample. Annealing affects both diagonal and off-diagonal GMI components.
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页数:4
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