Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

被引：1

作者：

Katsuno, M. ^{[1
]}

Ohtani, N. ^{[2
]}

Nakabayashi, M. ^{[1
]}

Fujimoto, T. ^{[1
]}

Yashiro, H. ^{[1
]}

Tsuge, H. ^{[1
]}

Aigo, T. ^{[1
]}

Hoshino, T. ^{[1
]}

Hirano, H. ^{[1
]}

Ohashi, W. ^{[1
]}

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Labs, 20-1 Shintomi, Chiba 2938511, Japan

[2] Kwansei Gakuin Univ, Chiba 6691337, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

dislocation; nitrogen impurity; photoluminescence; X-ray topography; BASAL-PLANE DISLOCATIONS;

D O I：

10.4028/www.scientific.net/MSF.645-648.311

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Dislocations in highly nitrogen-doped (N > 1 x 10(19) cm(-3)) low-resistivity (rho < 10 m Omega cm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of dislocations is discussed particularly in terms of their glide motion in the presence of a high concentration of nitrogen. The results indicate that nitrogen impurities up to mid 10(19) cm(-3) concentration do not show any discernible influence on the glide behavior of basal plane dislocations (BPDs) in 4H-SiC crystals grown by physical vapor transport (PVT) method.

引用

页码：311 / +

页数：2

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