The effects of interfacial dipoles on the properties of SiC group III nitride hetero-structures

Much of the research on hetero-epitaxial growth of compound semiconductors on elemental and compound semiconductor substrates has emphasized the degree to which the two semiconductors must be lattice-matched to produce hetero-structures with a minimum number of extended defects. This paper indicates that interfacial dipoles also play a significant role in the properties of heterointerfaces when the two semiconductors of a nearly lattice-matched pair come from different columns of the periodic table as in i) Gap and Si, ii) ZnSe and GaAs and iii) AIN and SiC.