Dynamics of nanoscale polarization backswitching in tetragonal lead zirconate titanate thin film

被引：40
作者：
Fu, DS
Suzuki, K
Kato, K
Suzuki, H
机构：
[1] Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
[2] Shizuoka Univ, Dept Mat Sci, Hamamatsu, Shizuoka 4328561, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 13期
关键词：
D O I：
10.1063/1.1565502
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The dynamics of polarization backswitching in highly oriented Pb(Zr0.3Ti0.7)O-3 (PZT) thin films has been studied in nanoscale using piezoresponse scanning force microscopy (SFM). Our measurements reveal that a SFM-written domain with diameter about 200 nm in PZT films loses its polarization through both the sidewise and forward backswitching. Both of these sidewise and forward domain wall motions follow a stretched exponential law. However, the characteristic time tau of forward backswitching are about ten times of that sidewise motion. The time dependence of sidewise domain wall velocity indicates that there is a time dependence of activation energy of the barrier that domain motions encounter. (C) 2003 American Institute of Physics.
引用
收藏
页码：2130 / 2132
页数：3
相关论文
共 11 条
  • [1] High-piezoelectric behavior of c-axis-oriented lead zirconate titanate thin films with composition near the morphotropic phase boundary
    Fu, DS
    Suzuki, H
    Ogawa, T
    Ishikawa, K
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (19) : 3572 - 3574
  • [2] Investigation of domain switching and retention in oriented PbZr0.3Ti0.7O3 thin film by scanning force microscopy
    Fu, DS
    Suzuki, K
    Kato, K
    Minakata, M
    Suzuki, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B): : 6724 - 6729
  • [3] Long-time piezoelectric relaxation in lead zirconate titanate thin film
    Fu, DS
    Ishikawa, K
    Yoshimi, Y
    Suzuki, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (5B): : L580 - L582
  • [4] Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films -: art. no. 014101
    Ganpule, CS
    Roytburd, AL
    Nagarajan, V
    Hill, BK
    Ogale, SB
    Williams, ED
    Ramesh, R
    Scott, JF
    [J]. PHYSICAL REVIEW B, 2002, 65 (01): : 1 - 7
  • [5] Nanoscale imaging of domain dynamics and retention in ferroelectric thin films
    Gruverman, A
    Tokumoto, H
    Prakash, AS
    Aggarwal, S
    Yang, B
    Wuttig, M
    Ramesh, R
    Auciello, O
    Venkatesan, T
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (24) : 3492 - 3494
  • [6] Imaging and control of domain structures in ferroelectric thin films via scanning force microscopy
    Gruverman, A
    Auciello, O
    Tokumoto, H
    [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 : 101 - 123
  • [7] Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale
    Gruverman, A
    Tanaka, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) : 1836 - 1843
  • [8] ISHIBASHI Y, 1996, FERROELECTRIC THIN F, V10, P135
  • [9] Stability of electrodeless ferroelectric domains near a ferroelectric/dielectric interface
    Li, X
    Mamchik, A
    Chen, IW
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (06) : 809 - 811
  • [10] Lines M. E., 1979, PRINCIPLES APPL FERR
12