Nitrogen doping efficiency during vapor phase epitaxy of 4H-SiC

This work examines the interrelationships among doping efficiency, mole fraction, and Si/C ratio for intentional doping of 4H-SiC during vapor phase epitaxy using N-2 For four Si/C ratios, the doping concentration increased linearly as a function of increasing N-2 partial pressure with a slope of 1.0 +/- 0.03. Variation of propane mole fraction while the SiH4 and N-2 mole fractions were kept constant revealed two different modes of nitrogen incorporation, corresponding to carbon-rich and silicon-rich conditions.