A two-dimensional ultrahigh vacuum positioner for scanning tunneling microscopy

被引：4

作者：

Pond, K ^{[1
]}

Nosho, BZ

Stuber, HR

Gossard, AC

Weinberg, WH

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Ctr Quantized Elect Struct, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1998年 / 69卷 / 03期

关键词：

Electronic density of states - Epitaxial growth - Reflection high energy electron diffraction - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconducting silicon - Semiconductor doping - Semiconductor quantum dots - Semiconductor superlattices;

D O I：

10.1063/1.1148773

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A two-dimensional ultrahigh vacuum compatible positioner is presented. The positioner uses two piezoelectric inchworms which allow for motions of up to 1 cm viith a precision of 4 nm mounted at right angles to each other in order to give two dimensions of motion. Images of three-dimensional In0.3Ga0.7As islands in cross section are presented to demonstrate the functionality of the positioner. It is found that motion towards the tip is smooth, while motion in the perpendicular direction is less smooth. (C) 1998 American Institute of Physics. [S0034-6748(98)03903-3].

引用

页码：1403 / 1405

页数：3

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