Charge stability of shallow single nitrogen-vacancy centers in lightly boron-doped diamond

被引：8

作者：

Taisuke, Kageura ^{[1
]}

Yosuke, Sasama ^{[1
,2
]}

Chikara, Shinei ^{[2
]}

Tokuyuki, Teraji

Keisuke, Yamada ^{[3
]}

Shinobu, Onoda ^{[3
]}

Takahide, Yamaguchi ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, Funct Mat Res Ctr, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Quantum & Radiol Sci & Technol, Takasaki, Gumma 3701292, Japan

来源：

CARBON | 2022年 / 192卷

关键词：

NV center; Charge state; Boron; Surface; Band-bending; Charge transfer; DEFECT CENTER; QUANTUM; SURFACE; SPINS;

D O I：

10.1016/j.carbon.2022.01.027

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nitrogen vacancy (NV) centers in diamond must be in a stable negatively charged state for their application to quantum sensing and quantum information processing. In this study, we investigated the charge-state stability of single NV centers in lightly boron-doped diamond ([B] approximate to 1 x 10(15) cm(-3)). Photoluminescence and optically detected magnetic resonance measurements indicated that single NV centers near the diamond surface are negatively charged despite the presence of boron acceptors. This unique phenomenon can be explained by charge transfer between the NV centers and their local environment under laser excitation. This study provides a new perspective on the charge stability of single NV centers in lightly doped diamond and insights for further development of high-performance diamond quantum devices. (C) 2022 Elsevier Ltd. All rights reserved.

引用

页码：473 / 481

页数：9

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