All-digital TX frequency synthesizer and discrete-time receiver for Bluetooth radio in 130-nm CMOS

被引:379
作者
Staszewski, RB [1 ]
Muhammad, K
Leipold, D
Hung, CM
Ho, YC
Wallberg, JL
Fernando, C
Maggio, K
Staszewski, R [1 ]
Jung, T
Koh, J
John, S
Deng, IY
Sarda, V
Moreira-Tamayo, O
Mayega, V
Katz, R
Friedman, O
Eliezer, OE
De-Obaldia, E
Balsara, PT
机构
[1] Texas Instruments Inc, Wireless Analog Technol Ctr, Dallas, TX 75243 USA
[2] Texas Instruments Inc, Mobile Connect Solut, Raanana, Israel
[3] Univ Texas, Ctr Integrated Circuits & Syst, Richardson, TX 75083 USA
关键词
all digital; Bluetooth; direct sampling; discrete time; frequency modulation; frequency synthesizers; phase domain; phase-locked loops; radio receivers; radio transmitters; sampled data circuits; single chip; system-on-chip (SoC); tranceivers;
D O I
10.1109/JSSC.2004.836345
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a single-chip fully compliant Bluetooth radio fabricated in a digital 130-nm CMOS process. The transceiver is architectured from the ground up to be compatible with digital deep-submicron CMOS processes and be readily integrated with a digital baseband and application processor. The conventional RF frequency synthesizer architecture, based on the voltage-controlled oscillator and the phase/frequency detector and charge-pump combination, has been replaced with a digitally controlled oscillator and a time-to-digital converter, respectively. The transmitter architecture takes advantage of the wideband frequency modulation capability of the all-digital phase-locked loop with built-in automatic compensation to ensure modulation accuracy. The receiver employs a discrete-time architecture in which the RF signal is directly sampled and processed using analog and digital signal processing techniques. The complete chip also integrates power management functions and a digital baseband processor. Application of the presented ideas has resulted in significant area and power savings while producing structures that are amenable to migration to more advanced deep-submicron processes, as they become available. The entire IC occupies 10 mm(2) and consumes 28 mA during transmit and 41 mA during receive at 1.5-V supply.
引用
收藏
页码:2278 / 2291
页数:14
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