Reduction in interface state density of SiO2/Si-IPL/InP by fluorine and sulfur passivations

被引：4
作者：
Yen, Chih-Feng [1 ]
Lee, Ming-Kwei [2 ]
机构：
[1] Ming Dao Univ, Dept Mat Sci & Engn, Changhua 52345, Taiwan
[2] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 12期
关键词：
INSULATOR-SEMICONDUCTOR; SURFACE-PROPERTIES; GAAS; OXIDE; ANNEAL;
D O I：
10.7567/JJAP.53.121201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The characteristics of a liquid-phase-deposited SiO2 film on InP were investigated. The mixture of H2SiF6 and H3BO3 aqueous precursors was used as the growth solution. SiO2 on InP with (NH4)(2)S treatment showed good electrical characteristics owing to the reduction of native oxides and sulfur passivation. The electrical characteristics were further improved with an ultrathin Si interface passivation layer (IPL) through reductions in Fermi-level pinning and interface state density. Moreover, during the SiO2 deposition, the HF in the growth solution simultaneously and effectively removed native oxides from the Si-IPL and provided fluorine passivation on it. The Al/SiO2/Si-IPL/(NH4)(2)S-treated InP MOS capacitor showed superior electrical properties. The leakage current density reached 6.9 x 10-9 and 1.6 x 10(-7)A/cm(2) at +/- 2V. The interface state density reached 3.6 x 10(11)cm(-2) eV(-1) with low frequency dispersion of 12.3%. (C) 2014 The Japan Society of Applied Physics
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页数：5
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