Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction

被引：6
|
作者：
Cafolla, AA
McGinley, C
McLoughlin, E
Hughes, G
Moriarty, P
Dunn, AW
Ma, YR
Teehan, D
Murphy, B
Downes, S
Woolf, DA
机构：
[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND
[2] SERC,DARESBURY LAB,WARRINGTON WA4 4AD,CHESHIRE,ENGLAND
[3] UNIV WALES COLL CARDIFF,DEPT PHYS & ASTRON,CARDIFF CF1 3AT,S GLAM,WALES
来源：
SURFACE SCIENCE | 1997年 / 377卷 / 1-3期
关键词：
antimony; gallium arsenide; low energy electron diffraction; metal-semiconductor interfaces; photoelectron emission; soft X-ray photoelectron spectroscopy;
D O I：
10.1016/S0039-6028(96)01379-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The surface structures resulting from the deposition of Sb on the GaAs(111)B-(2 x 2) surface at room temperature followed by annealing, have been studied by high-resolution soft X-ray photoemission (SXPS) and low energy electron diffraction (LEED). For depositions at room temperature with no subsequent anneal and for annealing temperatures up to 300 degrees C, Sb islands are formed between which the As trimer-based (? x 2) substrate reconstruction of the clean GaAs surface is observed. Annealing to temperatures between 350 and 475 degrees C leads to the creation of Sb chain pairs coexisting with regions of Sb trimers. At 500 degrees C an ordered surface is produced, associated with Sb trimers and an As vacancy.
引用
收藏
页码：130 / 134
页数：5
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