GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy

被引：4

作者：

Guha, S ^{[1
]}

Bojarczuk, NA ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 23期

关键词：

gallium nitride; light emitting diodes; optoelectronic devices;

D O I：

10.1049/el:19971312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The author; have demonstrated the operation of GaN based light emitting diodes groan on Si(lll) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 in the current injection range of 20-65A/cm(2) at 5-7.5 volts.

引用

页码：1986 / 1987

页数：2

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