On the route towards efficient light emitting diodes based on porous silicon

被引：0
作者：
Cazzanelli, M
Pavesi, L
Bisi, O
Dubos, P
Bellutti, P
Soncini, G
Faglia, G
Sberveglieri, G
机构：
[1] Univ Trent, Dipartimento Fis, I-38050 Trent, Italy
[2] INFM, Trent, Italy
[3] IRST, Div Microsensori & Integraz Sistemi, I-38050 Trent, Italy
[4] Univ Trent, Dipartimento Ingn Mat, Mesiano, Italy
[5] Univ Brescia, Dipartimento Chim & Fis Mat, Brescia, Italy
[6] INFM, Brescia, Italy
来源：
SOLID STATE PHENOMENA | 1997年 / 54卷
关键词：
porous silicon; interference filter; optical microcavity; light emitting diode;
D O I：
10.4028/www.scientific.net/SSP.54.27
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we present our recent progresses towards efficient light emitting diodes based on porous silicon. We will touch the two following topics: 1) All porous silicon microcavities. Through the formation of a planar optical cavity it is possible to vary the spontaneous emission rate of porous silicon films. We demonstrate this by showing luminescence, and time resolved luminescence measurements performed on all porous silicon periodic and random microcavities. 2) Light emitting diodes based on n-type doped silicon/porous silicon heterojunctions. Exploiting the selectivity of the porous silicon formation process we formed light emitting diodes with superior performance with respect to metal/porous silicon devices. The use of these diodes as gas sensors is also investigated.
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页码：27 / 36
页数：10
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