On the nature of the spin-polarized hole states in a quasi-two-dimensional GaMnAs ferromagnetic layer

被引:8
作者
Cabral, E. Dias [1 ]
Boselli, M. A.
Lima, A. T. da Cunha
Ghazali, A.
Lima, I. C. da Cunha
机构
[1] Univ Estado Rio de Janeiro, Inst Fis, BR-20500013 Rio De Janeiro, Brazil
[2] Univ Fed Ouro Preto, Dept Fis, BR-35400000 Ouro Preto, MG, Brazil
[3] Univ Veiga de Almeida, BR-28905970 Rio De Janeiro, Brazil
[4] Inst NanoSci Paris, F-75015 Paris, France
基金
巴西圣保罗研究基金会;
关键词
D O I
10.1063/1.2721129
中图分类号
O59 [应用物理学];
学科分类号
摘要
A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering approximation. Using parameters corresponding to GaMnAs thin layers, a wide range of Mn concentrations and hole densities have been explored to understand the nature, localized or extended, of the spin-polarized holes at the Fermi level for several values of the average magnetization of the Mn system. The authors show that, for a certain interval of Mn and hole densities, an increase on the magnetic order of the Mn ions come together with a change of the nature of the states at the Fermi level. This fact provides a delocalization of spin-polarized extended states antialigned to the average Mn magnetization and a higher spin polarization of the hole gas. This nonmetal-to-metal transition caused by the increase of Mn concentration once the ferromagnetic phase is reached was observed experimentally since the first samples were produced. These results are consistent with the occurrence of ferromagnetism with relatively high transition temperatures observed in some thin film samples and multilayered structures of this material. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 9 条
[1]   Indirect exchange in (Ga,Mn)As bilayers via the spin-polarized inhomogeneous hole gas: Monte Carlo simulation [J].
Boselli, MA ;
Lima, ICD ;
Ghazali, A .
PHYSICAL REVIEW B, 2003, 68 (08)
[2]   Spin-polarized transport in GaMnAs multilayers [J].
da Silva, LL ;
Boselli, MA ;
Lima, ICD ;
Wang, XF ;
Ghazali, A .
APPLIED PHYSICS LETTERS, 2001, 79 (20) :3305-3307
[3]   THE MODIFICATION OF ELECTRON ENERGY LEVELS BY IMPURITY ATOMS [J].
KLAUDER, JR .
ANNALS OF PHYSICS, 1961, 14 (01) :43-76
[4]   QUANTUM THEORY OF ELECTRICAL TRANSPORT PHENOMENA [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW, 1957, 108 (03) :590-611
[5]   Ferromagnetism and interlayer exchange coupling in short-period (Ga,Mn)As/GaAs superlattices [J].
Mathieu, R ;
Svedlindh, P ;
Sadowski, J ;
Swiatek, K ;
Karlsteen, M ;
Kanski, J ;
Ilver, L .
APPLIED PHYSICS LETTERS, 2002, 81 (16) :3013-3015
[6]   Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].
Matsukura, F ;
Ohno, H ;
Shen, A ;
Sugawara, Y .
PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040
[7]   Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].
Ohno, Y ;
Young, DK ;
Beschoten, B ;
Matsukura, F ;
Ohno, H ;
Awschalom, DD .
NATURE, 1999, 402 (6763) :790-792
[8]   Charge and spin distributions in Ga1-xMnxAs/GaAs ferromagnetic multilayers -: art. no. 165308 [J].
Rodrigues, SCP ;
Scolfaro, LMR ;
Leite, JR ;
Lima, ICD ;
Sipahi, GM ;
Boselli, MA .
PHYSICAL REVIEW B, 2004, 70 (16) :1-8
[9]   FROM BAND TAILING TO IMPURITY-BAND FORMATION AND DISCUSSION OF LOCALIZATION IN DOPED SEMICONDUCTORS - A MULTIPLE-SCATTERING APPROACH [J].
SERRE, J ;
GHAZALI, A .
PHYSICAL REVIEW B, 1983, 28 (08) :4704-4715