Pure frequency-polarisation bistability in vertical cavity surface-emitting semiconductor laser subject to optical injection

被引:46
作者
Hong, Y [1 ]
Shore, KA
Larsson, A
Ghisoni, M
Halonen, J
机构
[1] Univ Wales, Sch Informat, Bangor LL57 1UT, Gwynedd, Wales
[2] Chalmers Univ Technol, Dept Microelect, Photon Lab, SE-41296 Gothenburg, Sweden
关键词
D O I
10.1049/el:20001390
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Pure frequency-polarisation bistability in a Vertical cavity surface-emitting semiconductor laser subject to optical injection has been observed. It was found that the width of the bistability loop may be enhanced by increasing the injection power.
引用
收藏
页码:2019 / 2020
页数:2
相关论文
共 5 条
[1]   Fast polarization switching with memory effect in a vertical cavity surface emitting laser subject to modulated optical injection [J].
Boiko, DL ;
Stéphan, GM ;
Besnard, P .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4096-4099
[2]   Wavelength switching by positively detuned side-mode injection in semiconductor lasers [J].
Hong, Y ;
Shore, KA ;
Lawrence, JS ;
Kane, DM .
APPLIED PHYSICS LETTERS, 2000, 76 (22) :3170-3172
[3]   PITCHFORK BIFURCATION POLARIZATION BISTABILITY IN VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].
KAWAGUCHI, H ;
HIDAYAT, IS ;
TAKAHASHI, Y ;
YAMAYOSHI, Y .
ELECTRONICS LETTERS, 1995, 31 (02) :109-111
[4]   OPTICAL-INJECTION INDUCED POLARIZATION BISTABILITY IN VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].
PAN, ZG ;
JIANG, SJ ;
DAGENAIS, M ;
MORGAN, RA ;
KOJIMA, K ;
ASOM, MT ;
LEIBENGUTH, RE ;
GUTH, GD ;
FOCHT, MW .
APPLIED PHYSICS LETTERS, 1993, 63 (22) :2999-3001
[5]   Theoretical analysis of polarization bistability in vertical cavity surface emitting semiconductor lasers [J].
Yu, SF .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (06) :1032-1041