Growth of A-plane (11-20) in-rich InGaN on R-plane (10-12) sapphire by RF-MBE

被引：6

作者：

Noda, M. ^{[1
]}

Kumagai, Y. ^{[1
]}

Takado, S. ^{[1
]}

Muto, D. ^{[1
]}

Na, H. ^{[2
]}

Naoi, H. ^{[2
]}

Araki, T. ^{[1
]}

Nanishi, Y. ^{[1
,2
]}

机构：

[1] Ritsumeikan Univ, Dept Photon, 1-1-1 Noji Higashi, Shiga 5258577, Japan

[2] Ritsumeikan Univ, Ctr Promot COE Pro, Shiga 5258577, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674904

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Non-polar A-plane (11-20) high In content (In-rich) InGaN was grown on R-plane (10-12) sapphire with an InN template by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). Nitridation of R-plane sapphire was carried out at 300 degrees C for 2 hours by RF-nitrogen plasma. A template of A-plane InN was grown at 400 degrees C. The In-rich InGaN films were then grown at the same temperature on the InN template. We characterized the films using reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM) and photo-luminescence (PL). These results indicated clearly that non-polar In0.71Ga0.29N was successfully obtained with a PL emission at approximately 1.1 eV. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2560 / +

页数：3

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