Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager

被引：53

作者：

Inoue, I ^{[1
]}

Tanaka, N ^{[1
]}

Yamashita, H ^{[1
]}

Yamaguchi, T ^{[1
]}

Ishiwata, H ^{[1
]}

Ihara, H ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semicond Co, Syst LSI Div, Yokohama, Kanagawa 2478585, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 01期

关键词：

D O I：

10.1109/TED.2002.807525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-leakage current and low-operating-voltage buried-photodiode structure of CMOS image sensors has been developed. The new structure adopted a modified fabrication process as well as an additional shallow p+ layer structure that covers the entire surface of the deep n-type photodiode. The required operating voltage for complete charge transfer from the photodiode is 3.3 V. Furthermore, the leakage current level allows high-quality images comparable to those of CCD image sensors.

引用

页码：43 / 47

页数：5