Reflectance spectra and refractive index of a Nd:YAG laser-oxidized Si surface

被引:8
作者
Aygun, G [1 ]
Atanassova, E
Turan, R
Babeva, T
机构
[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[3] Bulgarian Acad Sci, Cent Lab Photoproc, BU-1113 Sofia, Bulgaria
关键词
Nd : YAG laser oxidation; silicon; reflectance spectra; refractive index;
D O I
10.1016/j.matchemphys.2004.09.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reflectance spectra and refractive index of Nd:YAG laser-oxidized SiO2 layers with thicknesses from 15 to 75 nm have been investigated with respect to the laser beam energy density and substrate temperature. Thickness and refractive index of films have been determined from reflectance measurements at normal light incidence in the spectral range 300-800 nm. It was found that the oxide-growth conditions at higher substrate temperatures and laser powers greater than 3.36 J cm(-2) provides a better film quality in terms of both optical thickness and refractive index. However, the refractive indices of the films are smaller in the whole spectral range studied as compared to that of conventional thermally grown SiO2. This might be due to the porous structure formed during the laser-assisted oxidation. The results suggest the need of post-oxidation annealing to improve the refractive indices of the films, suitable for Si-device applications. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:316 / 320
页数:5
相关论文
共 16 条
[1]  
Atanassova E., 2001, THIN TA2O5 LAYERS SI, P439, DOI 10.1016/B978-012513910-6/50055-4
[2]   Oxidation of Si surface by a pulsed Nd:YAG laser [J].
Aygun, G ;
Atanassova, E ;
Alacakir, A ;
Ozyuzer, L ;
Turan, R .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (11) :1569-1575
[3]   Preparation and characterization of a reference aluminum mirror [J].
Babeva, T ;
Kitova, S ;
Mednikarov, B ;
Konstantinov, I .
APPLIED OPTICS, 2002, 41 (19) :3840-3846
[4]   CO2-LASER OXIDATION OF SILICON [J].
BOYD, IW ;
WILSON, JIB .
PHYSICA B & C, 1983, 117 (MAR) :1030-1032
[5]   OXIDATION OF SILICON SURFACES BY CO2-LASERS [J].
BOYD, IW ;
WILSON, JIB .
APPLIED PHYSICS LETTERS, 1982, 41 (02) :162-164
[6]  
BOYD IW, 1983, PHYSICA B, V118, P1030
[7]   An interior trust region approach for nonlinear minimization subject to bounds [J].
Coleman, TF ;
Li, YY .
SIAM JOURNAL ON OPTIMIZATION, 1996, 6 (02) :418-445
[8]   LASER-INDUCED OXIDATION OF THE SI(111) SURFACE [J].
CROS, A ;
SALVAN, F ;
DERRIEN, J .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (04) :241-245
[9]   Direct sub-μm lateral patterning of SOI by focused laser beam induced oxidation [J].
Deutschmann, RA ;
Huber, M ;
Neumann, R ;
Brunner, K ;
Abstreiter, G .
MICROELECTRONIC ENGINEERING, 1999, 48 (1-4) :367-370
[10]   Oxidation behavior of Cr films by Nd:YAG pulsed laser [J].
Dong, QZ ;
Hu, JD ;
Lian, JS ;
Guo, ZX ;
Chen, JW ;
Chen, B .
SCRIPTA MATERIALIA, 2003, 48 (09) :1373-1377