Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition

被引:6
作者
Nakamura, Tatsuru [1 ]
Masuko, Keiichiro [1 ]
Ashida, Atsushi [1 ]
Yoshimura, Takeshi [1 ]
Fujimura, Norifumi [1 ]
机构
[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Naka Ku, Osaka 5998531, Japan
关键词
Zinc oxide; Homoepitaxial growth; Pulsed laser deposition; Optical emission spectroscopy;
D O I
10.1016/j.tsf.2009.09.184
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Homoepitaxial ZnO thin films were prepared on the Zn-polar or O-polar ZnO substrates by pulsed laser deposition method Optical emission spectroscopy of the plume was carried out to estimate O/Zn flux ratio under the various deposition conditions such as oxygen pressure, laser fluence, and the distance between target and substrate. It is revealed that the O/Zn flux ratio could be controlled by laser fluence, oxygen pressure. and target-substrate distance. Zn-rich O/Zn flux promotes pit formation and O-rich flux yields the three-dimensional growth The difference of the growth process on Zn-polar or O-polar substrates is also discussed (C) 2009 Elsevier B V. All rights reserved
引用
收藏
页码:2971 / 2974
页数:4
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