Frequency kesponse of top-gated carbon nanotube field-effect transistors

被引：43
|
作者：
Singh, DV [1 ]
Jenkins, KA [1 ]
Appenzeller, J [1 ]
Neumayer, D [1 ]
Grill, A [1 ]
Wong, HSP [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2004年 / 3卷 / 03期
关键词：
AC measurement; carbon nanotube (CN); high frequency;
D O I：
10.1109/TNANO.2004.828577
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ac performance of carbon nanotube field-effect transistors (CNFETs) has been characterized using two approaches involving: 1) time- and 2) frequency-domain measurements. A high input impedance measurement system was used to demonstrate time-domain switching of CNFETs at frequencies up to 100 kHz. The low level of signal crosstalk in CNFETs fabricated on quartz substrates enabled frequency-domain measurements of the ac response of CNFETs in the megahertz range, over five orders of magnitude higher in frequency than previously reported ac measurements of CNFET devices.
引用
收藏
页码：383 / 387
页数：5
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