Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

被引：13

作者：

Gan, J. ^{[1
]}

Gorantla, S. ^{[1
]}

Riise, H. N. ^{[1
]}

Fjellvag, O. S. ^{[1
]}

Diplas, S. ^{[2
]}

Lovvik, O. M. ^{[1
,2
]}

Svensson, B. G. ^{[1
]}

Monakhov, E. V. ^{[1
]}

Gunnaes, A. E. ^{[1
]}

机构：

[1] Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, POB 1048, N-0316 Oslo, Norway

[2] SINTEF Mat & Chem, POB 124,Forskningsveien 1, N-0314 Oslo, Norway

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 15期

关键词：

Single crystals - Epitaxial growth - II-VI semiconductors - Magnetron sputtering - Ceramic materials - Heterojunctions - Copper oxides;

D O I：

10.1063/1.4945985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Cu2O films grown by reactive and ceramic radio frequency magnetron sputtering on single crystalline ZnO (0001) substrates are investigated. The films are grown on both O-and Zn-polar surface of the ZnO substrates. The Cu2O films exhibit a columnar growth manner apart from a similar to 5nm thick CuO interfacial layer. In comparison to the reactively sputtered Cu2O, the ceramic-sputtered films are less strained and appear to contain nanovoids. Irrespective of polarity, the Cu2O grown by reactive sputtering is observed to have (111) Cu2O parallel to(0001) ZnO epitaxial relationship, but in the case of ceramic sputtering the films are found to show additional (110) Cu2O reflections when grown on O-polar surface. The observed CuO interfacial layer can be detrimental for the performance of Cu2O/ZnO heterojunction solar cells reported in the literature. (C) 2016 AIP Publishing LLC.

引用

页数：5

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