Formation of three-dimensional ZnSe-based semiconductor nanostructures

被引：2
|
作者：
Alyshev, S. V. [1 ]
Zabezhaylov, A. O. [1 ]
Mironov, R. A. [1 ]
Kozlovsky, V. I. [2 ]
Dianov, E. M. [1 ]
机构：
[1] Russian Acad Sci, Fiber Opt Res Ctr, Moscow 119333, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 01期
关键词：
INGAAS/GAAS NANOTUBES; MICROTUBES;
D O I：
10.1134/S1063782610010112
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Nanostructures consisting of a 10-nm-thick sacrificial layer of ZnMgSSe and a 20-nm-thick stressed bilayer of ZnSSe/ZnSe were grown by molecular-beam epitaxy on GaAs substrates. Upon removal of the sacrificial layer by selective etching, multiwall ZnSSe/ZnSe microtubes were formed.
引用
收藏
页码：72 / 75
页数：4
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