Formation of three-dimensional ZnSe-based semiconductor nanostructures

被引：2

作者：

Alyshev, S. V. ^{[1
]}

Zabezhaylov, A. O. ^{[1
]}

Mironov, R. A. ^{[1
]}

Kozlovsky, V. I. ^{[2
]}

Dianov, E. M. ^{[1
]}

机构：

[1] Russian Acad Sci, Fiber Opt Res Ctr, Moscow 119333, Russia

[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 01期

关键词：

INGAAS/GAAS NANOTUBES; MICROTUBES;

D O I：

10.1134/S1063782610010112

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Nanostructures consisting of a 10-nm-thick sacrificial layer of ZnMgSSe and a 20-nm-thick stressed bilayer of ZnSSe/ZnSe were grown by molecular-beam epitaxy on GaAs substrates. Upon removal of the sacrificial layer by selective etching, multiwall ZnSSe/ZnSe microtubes were formed.

引用

页码：72 / 75

页数：4

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