P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors

被引：22
|
作者：
Mizutani, A [1 ]
Hatori, N [1 ]
Ohnoki, N [1 ]
Nishiyama, N [1 ]
Ohtake, N [1 ]
Koyama, F [1 ]
Iga, K [1 ]
机构：
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 11期
关键词：
VCSELs; GaAs(311)B; DBR; p-type doping; MOCVD; carbon;
D O I：
10.1143/JJAP.36.6728
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high p-type hole-concentration AlAs layer has been successfully grown on a GaAs (311)B substrate by metalorganic chemical vapor deposition with using a Carbon auto-doping technique. The doping concentration was well controlled by changing only V/III ratios. The hole concentration was as high as 2 x 10(19) cm(-3) at a V/III ratio of 6. A very low resistance of p-type distributed Bragg reflector was obtained with a a-doping technique to GaAs/AlAs interfaces.
引用
收藏
页码：6728 / 6729
页数：2
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