Tunable electrical conductivity in oriented thin films of tetrathiafulvalene-based covalent organic framework

被引:304
作者
Cai, Song-Liang [1 ,2 ]
Zhang, Yue-Biao [3 ,4 ]
Pun, Andrew B. [1 ]
He, Bo [1 ]
Yang, Jinhui [4 ,5 ]
Toma, Francesca M. [3 ,6 ]
Sharp, Ian D. [3 ,7 ]
Yaghi, Omar M. [3 ,4 ]
Fan, Jun [2 ]
Zheng, Sheng-Run [2 ]
Zhang, Wei-Guang [2 ]
Liu, Yi [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA
[2] S China Normal Univ, Sch Chem & Environm, Guangzhou 510006, Guangdong, Peoples R China
[3] Univ Calif Berkeley, Kavli Energy Nanosci Inst Berkeley, Dept Chem, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Joint Ctr Artificial Photosynth, Berkeley, CA 94720 USA
[6] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Chem Sci Div, Berkeley, CA 94720 USA
[7] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Phys Biosci Div, Berkeley, CA 94720 USA
关键词
TTF; CRYSTALLINE; DERIVATIVES;
D O I
10.1039/c4sc02593h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Despite the high charge-carrier mobility in covalent organic frameworks (COFs), the low intrinsic conductivity and poor solution processability still impose a great challenge for their applications in flexible electronics. We report the growth of oriented thin films of a tetrathiafulvalene-based COF (TTF-COF) and its tunable doping. The porous structure of the crystalline TTF-COF thin film allows the diffusion of dopants such as I-2 and tetracyanoquinodimethane (TCNQ) for redox reactions, while the closely packed 2D grid sheets facilitate the cross-layer delocalization of thus-formed TTF radical cations to generate more conductive mixed-valence TTF species, as is verified by UV-vis-NIR and electron paramagnetic resonance spectra. Conductivity as high as 0.28 S m(-1) is observed for the doped COF thin films, which is three orders of magnitude higher than that of the pristine film and is among the highest for COF materials.
引用
收藏
页码:4693 / 4700
页数:8
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