A 53.6 GHz Direct Injection-locked Frequency Divider with a 72% Locking Range in 65 nm CMOS Technology

被引：0

作者：

Chen, Wen-Lin ^{[1
]}

Shiao, Yu-Shao Jerry ^{[1
]}

Yen, Hsuan-Der ^{[1
,2
]}

Huang, Guo-Wei ^{[1
]}

Hsieh, Hsieh-Hung ^{[3
]}

Jou, Chewn-Pu ^{[3
]}

Hsueh, Fu-Lung ^{[3
]}

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[3] Taiwan Semicond Mfg Co, Design Technol Div, Hsinchu 300, Taiwan

来源：

2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年

关键词：

CMOS; injection-locked frequency divider (ILFD);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study presents a 53.6 GHz wideband direct injection-locked frequency divider (DILFD) using 65 nm CMOS technology. By operating a RF input transistor in subthreshold region and changing its forward body bias, the proposed DILFD achieves a 28.6 GHz (72%) locking range with 6.7 mW power consumption and 1 V supply voltage. When varying the supply voltage from 0.9 V to 1.1 V or its physical temperature from 253 K to 373 K, the measured locking range remains more than 22 GHz.

引用

页数：3

共 7 条

[1] 1-GHz and 2.8-GHz CMOS injection-locked ring oscillator prescalers [J].