Dislocation reduction in GaN films through selective island growth of InGaN

被引:12
作者
Keller, S [1 ]
Parish, G
Speck, JS
DenBaars, SP
Mishra, UK
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93111 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93111 USA
关键词
D O I
10.1063/1.1319528
中图分类号
O59 [应用物理学];
学科分类号
摘要
Dislocation reduction in GaN films grown on sapphire and silicon substrates was achieved by inserting thin InGaN layers grown in a selective island growth mode after partial passivation of the GaN surface with a submonolayer of silicon nitride. We show that this technique is most effective at reducing the pure edge dislocation density when it is high (i.e., > 10(10) cm(-2)) and less when the density is in the 10(8)-10(9) cm(-2) range. Thus, the structural quality of typically highly dislocated GaN on silicon films could be significantly improved, visible in a reduction of the (0002) full width at half maximum (FWHM) from 1300 arcsec for ordinary GaN on silicon to 800 arcsec for GaN films with silicon nitride/InGaN interlayers. In the case of GaN layers grown on sapphire (dislocation density similar to 10(9) cm(-2)), the method resulted mainly in a reduction of the FWHM of the (10 (1) over bar 2) and (20 (2) over bar 1) diffraction peaks. (C) 2000 American Institute of Physics. [S0003-6951(00)00343-0].
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页码:2665 / 2667
页数:3
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