共 11 条
[1]
ABARE AC, 2000, 0004 ECE U CAL SANT
[3]
GEHRKE T, 1999, MRS INTERNET J NITRI
[4]
Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1998, 37 (3B)
:L316-L318
[5]
Spiral growth of InGaN nanoscale islands on GaN
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1998, 37 (4B)
:L431-L434