Highly textured Bi2Te3-based materials for thermoelectric energy conversion

被引:88
作者
Ben-Yehuda, O. [1 ]
Shuker, R.
Gelbstein, Y.
Dashevsky, Z.
Dariel, M. P.
机构
[1] Ben Gurion Univ Negev, Dept Phys, IL-84105 Beer Sheva, Israel
[2] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
关键词
D O I
10.1063/1.2743816
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work is concerned with Bi2Te3-based compounds known as being highly effective materials for thermoelectric applications near room temperature. These compounds are characterized by a remarkable anisotropy linked to their R < overline > 3 < overline > m crystal structure. Two textured p-type Bi0.4Sb1.6Te3 samples were prepared using a powder metallurgy approach, with the c axis parallel to the pressing direction. One sample was undoped while the second was doped with Pb which acts as an acceptor. The electrical conductivity, Hall coefficient, and magnetoresistivity were measured from room temperature down to 6 K. The Seebeck coefficient alpha and electrical conductivity sigma were measured along and perpendicular to the c axis from 300 up to 550 K, and the thermal conductivity kappa was measured at 300 K. Different values of Seebeck coefficient were observed along and perpendicular to the c axis at temperatures above T-i, the beginning of intrinsic region in which the influence of the minority carriers becomes significant. Below T-i, the Seebeck coefficient was isotropic. The maximal power factor P=alpha(2)sigma, calculated on the basis of the experimental results, was about 40 mu W cm(-1) K-2 for the direction perpendicular to the c axis. The thermal conductivity values for the temperature domain above 300 K were calculated on the basis of a physical model and the measured values at 300 K. The calculated values of the figure of merit Z=P/kappa were 3x10(-3) and 2x10(-3) K-1 at 300 and 400 K for the two samples, respectively. These values are comparable to those observed in Bi2Te3-based single crystals, thus making the powder metallurgy approach appropriate for thermoelectric conversion applications. (c) 2007 American Institute of Physics.
引用
收藏
页数:6
相关论文
共 21 条
[1]  
Ben-Yehuda O, 2006, ICT'06: XXV INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS, P492
[2]   THERMOELECTRIC PROPERTIES OF (BIXSB1-X)2TE3 SINGLE-CRYSTAL SOLID-SOLUTIONS GROWN BY THE THM METHOD [J].
CAILLAT, T ;
CARLE, M ;
PIERRAT, P ;
SCHERRER, H ;
SCHERRER, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1992, 53 (08) :1121-1129
[3]   GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE [J].
DRABBLE, JR ;
GROVES, RD ;
WOLFE, R .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459) :430-443
[4]   CHEMICAL BONDING IN BISMUTH TELLURIDE [J].
DRABBLE, JR ;
GOODMAN, CHL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :142-144
[5]   Characterization and thermoelectric properties of p-type 25%Bi2Te3-75% Sb2Te3 prepared via mechanical alloying and plasma activated sintering [J].
Fan, XA ;
Yang, JY ;
Chen, RG ;
Yun, HS ;
Zhu, W ;
Bao, SQ ;
Duan, XK .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (04) :740-745
[6]   Powder metallurgical processing of functionally graded p-Pb1-xSnxTe materials for thermoelectric applications [J].
Gelbstein, Y. ;
Dashevsky, Z. ;
Dariel, M. P. .
PHYSICA B-CONDENSED MATTER, 2007, 391 (02) :256-265
[7]   High performance n-type PbTe-based materials for thermoelectric applications [J].
Gelbstein, Y ;
Dashevsky, Z ;
Dariel, MP .
PHYSICA B-CONDENSED MATTER, 2005, 363 (1-4) :196-205
[8]  
GOLTSMAN BM, 1972, THERMOELECTRIC SEMI, P4309
[9]   Effect of excess Te addition on the thermoelectric properties of the 20% Bi2Te3-80% Sb2Te3 single crystal and hot-pressed alloy [J].
Hyun, DB ;
Oh, TS ;
Hwang, JS ;
Shim, JD .
SCRIPTA MATERIALIA, 2001, 44 (03) :455-460
[10]  
*INT CTR DIFFR DAT, 1991, POWD DIFF FIL, P4309