Carrier transport mechanism in a nanoparticle-incorporated organic bistable memory device

被引：111
作者：
Lin, Heng-Tien [1 ]
Pei, Zingway
Chan, Yi-Jen
机构：
[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan
[2] Natl Cent Univ, Dept Elect Engn, Chungli 32001, Taiwan
[3] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 07期
关键词：
mechanism; organic memory; space-chargelimited current (SCLC);
D O I：
10.1109/LED.2007.899668
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, the conduction mechanism in nanoparticle-contained polymer memory was investigated experimentally and theoretically. The current-voltage characteristics showed that the device switches from an initial low-conductivity state to a high-conductivity state upon application of an external electric field at room temperature. The current transition exhibited a very narrow voltage range that causes an abrupt increase of current. A trap-filled space-charge-limited current model was proposed and supported by the experimental data to explain the transport mechanism in organic memory.
引用
收藏
页码：569 / 571
页数：3
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