Imaging the in-plane distribution of helium precipitates at a Cu/V interface

被引：24

作者：

Chen, Di ^{[1
]}

Li, Nan ^{[2
]}

Yuryev, Dina ^{[3
]}

Wen, Juan ^{[1
]}

Baldwin, Kevin ^{[2
]}

Demkowicz, Michael J. ^{[4
]}

Wang, Yongqiang ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Mat Sci & Technol Div, Los Alamos, NM 87545 USA

[2] Los Alamos Natl Lab, Mat Phyc & Applicat Div, Ctr Integrated Nanotechnol, Los Alamos, NM USA

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] Texas A&M Univ, Dept Mat Sci & Engn, College Stn, TX USA

来源：

MATERIALS RESEARCH LETTERS | 2017年 / 5卷 / 05期

关键词：

Helium precipitates; interfaces; physical vapor deposition; ion implantation; metal nanocomposites; RADIATION-DAMAGE; HE; DISLOCATIONS; IRRADIATION; BUBBLES; IMPLANTATION; MULTILAYERS; COMPOSITES; REDUCTION; TOLERANCE;

D O I：

10.1080/21663831.2017.1287132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along < 110 >-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations. [GRAPHICS] .

引用

页码：335 / 342

页数：8

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