The structure and magnetic properties of Co films on Si(111) and Si(001) substrates

被引：5
|
作者：
Chebotkevich, L. A. [1 ,2 ]
Ermakov, K. S. [1 ]
Balashev, V. V. [2 ]
Davydenko, A. V. [1 ]
Ivanov, Yu. P. [1 ,2 ]
Ognev, A. V. [1 ,2 ]
机构：
[1] Far Eastern State Univ, Vladivostok 690950, Russia
[2] Russian Acad Sci, Far Eastern Div, Inst Automat & Control Proc, Vladivostok 690041, Russia
来源：
PHYSICS OF METALS AND METALLOGRAPHY | 2010年 / 109卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
MAGNETORESISTANCE;
D O I：
10.1134/S0031918X10060050
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
Epitaxial Co films have been grown on single-crystal Si(111) and Si(001) substrates. The structure and the lattice parameter of Co films have been determined using the method of reflection high-energy electron diffraction. The domain structure of the epitaxial Co films has been studied, and the presence of a magnetocrystalline anisotropy and an anisotropy induced by substrate steps have been established. It has been shown that the coercive force of epitaxial Co films is determined by the roughness of the surface and by misfit dislocations.
引用
收藏
页码：604 / 610
页数：7
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