Spin-peierls transition in the random impurity sublattice of a semiconductor

被引：1
|
作者：
Veinger, A. I. [1 ]
Zabrodskii, A. G. [1 ]
Tisnek, T. V. [1 ]
Goloshchapov, S. I. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
N-GE; RESONANCE; COMPOUND;
D O I：
10.1134/S1063782610060035
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study of electron spin resonance in uncompensated Ge:As semiconductor samples in the vicinity of the insulator-metal second-order phase transiti on reveals that the interaction of spins localized at As atoms brings about a distortion of the crystal lattice and enhances the localization. This effect occurs in the range of electron concentrations n = 3 x 10(17)-3.7 x 10(17) cm(-3), just below the critical point of the phase transition. The effect is explained in the context of a model considering the spin-Peierls transition in the random impurity sublattice of the semiconductor, and its features, as compared to other known materials where the spin-Peierls transition is observed, are understood.
引用
收藏
页码：705 / 711
页数：7
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