Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs

被引：7

作者：

Ghandi, R. ^{[1
]}

Domeij, M. ^{[1
]}

Esteve, R. ^{[2
]}

Buono, B. ^{[1
]}

Schoner, A. ^{[2
]}

Han, J. ^{[3
,4
]}

Dimitrijev, S. ^{[3
,4
]}

Reshanov, S. A. ^{[2
]}

Zetterling, C. -M. ^{[1
]}

Ostling, M. ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Isafjordsgatan 22, S-16440 Kista, Sweden

[2] Acreo AB, S-16440 Kista, Sweden

[3] Griffith Univ, Griffith Sch Engn, Brisbane, Qld 4111, Australia

[4] Griffith Univ, Queensland Microtechnol Facility, Brisbane, Qld 4111, Australia

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

Surface passivation; Bipolar Junction Transistors (BJT); 4H-SiC;

D O I：

10.4028/www.scientific.net/MSF.645-648.661

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 degrees C during 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.

引用

页码：661 / +

页数：2

共 50 条

[41] Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen
Williams, JR
Isaacs-Smith, T
Wang, S
Ahyi, C
Lawless, RM
Tin, CC
Dhar, S
Franceschetti, A
Pantelides, ST
Feldman, LC
Chung, G
Chisholm, M
FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 2004, 786 : 371 - 378
[42] Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers
Nigam, S
Kim, J
Ren, F
Chung, G
MacMillan, MF
Pearton, SJ
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (01) : G4 - G6
[43] High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
Zhang, Jianhui
Zhao, Jian H.
Wang, Xiaohui
Li, Xueqing
Fursin, Leonid
Alexandrov, Petre
Gagliardi, Mari-Anne
Lange, Mike
Dries, Chris
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 710 - +
[44] 15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain
Salemi, Arash
Elahipanah, Hossein
Jacobs, Keijo
Zetterling, Carl-Mikael
Ostling, Mikael
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (01) : 63 - 66
[45] High temperature characterization of double base epilayer 4H-SiC BJTs
Zhang Qian
Zhang Yuming
Zhang Yimen
Wang Yuehu
JOURNAL OF SEMICONDUCTORS, 2010, 31 (11) : 1140051 - 1140055
[46] Demonstration of 3 kV 4H-SiC Reverse Blocking MOSFET
Mori, Seigo
Aketa, Masatoshi
Sakaguchi, Takui
Asahara, Hirokazu
Nakamura, Takashi
Kimoto, Tsunenobu
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 271 - 274
[47] High-voltage (3 kV) UMOSFETs in 4H-SiC
Li, Y
Cooper, JA
Capano, MA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (06) : 972 - 975
[48] Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs
Salemi, Arash
Elahipanah, Hossein
Zetterling, Carl-Mikael
Ostling, Mikael
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (10) : 1069 - 1072
[49] Analysis of the base current and saturation voltage in 4H-SiC power BJTs
Domeij, Martin
Lee, Hyung-Seok
Zetterling, Carl-Mikael
Ostling, Mikael
2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10, 2007, : 2744 - 2750
[50] Dynamic performance of 3.1 kV 4H-SiC asymmetrical GTO thyristors
Agarwal, AK
Ivanov, PA
Levinshtein, ME
Palmour, JW
Rumyantsev, SL
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1349 - 1352

← 1 2 3 4 5 →