Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs

被引：7
|
作者：
Ghandi, R. [1 ]
Domeij, M. [1 ]
Esteve, R. [2 ]
Buono, B. [1 ]
Schoner, A. [2 ]
Han, J. [3 ,4 ]
Dimitrijev, S. [3 ,4 ]
Reshanov, S. A. [2 ]
Zetterling, C. -M. [1 ]
Ostling, M. [1 ]
机构：
[1] KTH Royal Inst Technol, Isafjordsgatan 22, S-16440 Kista, Sweden
[2] Acreo AB, S-16440 Kista, Sweden
[3] Griffith Univ, Griffith Sch Engn, Brisbane, Qld 4111, Australia
[4] Griffith Univ, Queensland Microtechnol Facility, Brisbane, Qld 4111, Australia
来源：
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷
关键词：
Surface passivation; Bipolar Junction Transistors (BJT); 4H-SiC;
D O I：
10.4028/www.scientific.net/MSF.645-648.661
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 degrees C during 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.
引用
收藏
页码：661 / +
页数：2
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