Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells

被引：0
|
作者：
Rudin, S. [1 ]
Garrett, G. A.
Shen, H.
Wraback, M.
Imer, B. [1 ]
Haskell, B. [1 ]
Speck, J. S. [1 ]
Keller, S. [1 ]
Nakamura, S. [1 ]
DenBaars, S. P. [1 ]
机构：
[1] Univ Calif, Santa Barbara, CA USA
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The radiative rates are presented as functions of temperature and well width.
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页码：315 / +
页数：2
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