Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

被引：27
作者：
Huang, Weichuan [1 ]
Lin, Yue [1 ]
Yin, Yuewei [1 ,2 ]
Feng, Lei [1 ]
Zhang, Dalong [1 ]
Zhao, Wenbo [1 ]
Li, Qi [2 ]
Li, Xiaoguang [1 ,3 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China
[2] Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
[3] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 16期
基金：
美国国家科学基金会;
关键词：
multiferroic tunnel junctions; tunneling magnetoresistance; tunneling electroresistance; interface; intermixing; FERROELECTRIC CONTROL; SPIN POLARIZATION; ELECTRORESISTANCE; FIELD; CHARGE; MODULATION;
D O I：
10.1021/acsami.6b02150
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents at least four resistance states in a single memory cell and therefore opens an avenue for the development of the next generation of high-density nonvolatile memory devices. Here, using the all-perovskite-oxide La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 as a model MFTJ system, we demonstrate asymmetrical Mn-Ti sublattice intermixing at the La0.7Sr0.3MnO3/BaTiO3 interfaces by direct local measurements of the structure and valence, which reveals the relationship between ferroelectric polarization directions and four-resistance states, and the low temperature anomalous tunneling behavior in the MFTJ. These findings emphasize the crucial role of the interfaces in MFTJs and are quite important for understanding the electric transport of MFTJs as well as designing high-density multistates storage devices.
引用
收藏
页码：10422 / 10429
页数：8
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