Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

被引：27
|
作者：
Huang, Weichuan [1 ]
Lin, Yue [1 ]
Yin, Yuewei [1 ,2 ]
Feng, Lei [1 ]
Zhang, Dalong [1 ]
Zhao, Wenbo [1 ]
Li, Qi [2 ]
Li, Xiaoguang [1 ,3 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China
[2] Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
[3] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 16期
基金：
美国国家科学基金会;
关键词：
multiferroic tunnel junctions; tunneling magnetoresistance; tunneling electroresistance; interface; intermixing; FERROELECTRIC CONTROL; SPIN POLARIZATION; ELECTRORESISTANCE; FIELD; CHARGE; MODULATION;
D O I：
10.1021/acsami.6b02150
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents at least four resistance states in a single memory cell and therefore opens an avenue for the development of the next generation of high-density nonvolatile memory devices. Here, using the all-perovskite-oxide La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 as a model MFTJ system, we demonstrate asymmetrical Mn-Ti sublattice intermixing at the La0.7Sr0.3MnO3/BaTiO3 interfaces by direct local measurements of the structure and valence, which reveals the relationship between ferroelectric polarization directions and four-resistance states, and the low temperature anomalous tunneling behavior in the MFTJ. These findings emphasize the crucial role of the interfaces in MFTJs and are quite important for understanding the electric transport of MFTJs as well as designing high-density multistates storage devices.
引用
收藏
页码：10422 / 10429
页数：8
相关论文
共 50 条
  • [1] Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions
    Yin, Yue-Wei
    Huang, Wei-Chuan
    Liu, Yu-Kuai
    Yang, Sheng-Wei
    Dong, Si-Ning
    Tao, Jing
    Zhu, Yi-Mei
    Li, Qi
    Li, Xiao-Guang
    ADVANCED ELECTRONIC MATERIALS, 2015, 1 (11):
  • [2] Multilevel magnetoresistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 heterostructure grown on MgO
    Khanas, Anton
    Hebert, Christian
    Hrabovsky, David
    Becerra, Loic
    Jedrecy, Nathalie
    APPLIED PHYSICS LETTERS, 2024, 125 (04)
  • [3] Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions
    Yin, Y. W.
    Raju, M.
    Hu, W. J.
    Weng, X. J.
    Li, X. G.
    Li, Q.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [4] Tunneling magnetoresistance above room temperature in La0.7Sr0.3MnO3/SrTiO3/La0.7Sr0.3MnO3 junctions
    Ogimoto, Y
    Izumi, M
    Sawa, A
    Manako, T
    Sato, H
    Akoh, H
    Kawasaki, M
    Tokura, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (4A): : L369 - L372
  • [5] On the redistribution of charge in La0.7Sr0.3CrO3/La0.7Sr0.3MnO3 multilayer thin films
    Penn, Aubrey N.
    Koohfar, Sanaz
    Kumah, Divine P.
    LeBeau, James M.
    AIP ADVANCES, 2020, 10 (04)
  • [6] Thickness Dependent Transport Studies Of YBCO In La0.7Sr0.3MnO3/YBa2Cu3O7/La0.7Sr0.3MnO3 Heterostructure
    Sharma, Minaxi
    Sharma, K. K.
    Kumar, Ravi
    Choudhary, R. J.
    PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013), 2013, 1536 : 345 - +
  • [7] Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions
    Galceran, R.
    Balcells, Ll.
    Martinez-Boubeta, C.
    Bozzo, B.
    Cisneros-Fernandez, J.
    de la Mata, M.
    Magen, C.
    Arbiol, J.
    Tornos, J.
    Cuellar, F. A.
    Sefrioui, Z.
    Cebollada, A.
    Golmar, F.
    Hueso, L. E.
    Casanova, F.
    Santamaria, J.
    Martinez, B.
    PHYSICAL REVIEW B, 2015, 92 (09):
  • [8] Switchable Optically Active Schottky Barrier in La0.7Sr0.3MnO3/BaTiO3/ITO Ferroelectric Tunnel Junction
    Rivera-Calzada, Alberto
    Gallego, Fernando
    Kalcheim, Yoav
    Salev, Pavel
    del Valle, Javier
    Tenreiro, Isabel
    Leon, Carlos
    Santamaria, Jacobo
    Schuller, Ivan K.
    ADVANCED ELECTRONIC MATERIALS, 2021, 7 (06)
  • [9] Possible spin-triplet superconducting phase in the La0.7Sr0.3MnO3/YBa2Cu3O7/La0.7Sr0.3MnO3 trilayer
    Dybko, K.
    Werner-Malento, K.
    Aleshkevych, P.
    Wojcik, M.
    Sawicki, M.
    Przyslupski, P.
    PHYSICAL REVIEW B, 2009, 80 (14)
  • [10] Unconventional switching behavior in La0.7Sr0.3MnO3/La0.7Sr0.3CoO3 exchange-spring bilayers
    Li, Binzhi
    Chopdekar, Rajesh V.
    Arenholz, Elke
    Mehta, Apurva
    Takamura, Yayoi
    APPLIED PHYSICS LETTERS, 2014, 105 (20)
12345