Electrical characterization of nanocrystalline Si films by scanning tunnelling spectroscopy and beam-induced current in the scanning tunnelling microscope

被引：4

作者：

Nogales, E ^{[1
]}

Méndez, B ^{[1
]}

Piqueras, J ^{[1
]}

Plugaru, R ^{[1
]}

机构：

[1] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Mat, E-28040 Madrid, Spain

来源：

NANOTECHNOLOGY | 2003年 / 14卷 / 01期

关键词：

D O I：

10.1088/0957-4484/14/1/315

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by current imaging tunnelling spectroscopy. STM images reveal a cell structure with cell sizes of about 200 nm. STM-REBIC images display space-charge regions associated with the cell boundaries. The STM-REBIC contrast has been found to depend on the implantation dose and the thermal treatment given to the sample. The results show the capability of STM-REBIC to image electrically active regions in nanocrystalline silicon films with a resolution of up to 10 nm.

引用

页码：65 / 68

页数：4

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