Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm

被引：29

作者：

Fu, Mengqi ^{[1
,2
]}

Pan, Dong ^{[3
]}

Yang, Yingjun ^{[1
,2
]}

Shi, Tuanwei ^{[1
,2
]}

Zhang, Zhiyong ^{[1
,2
]}

Zhao, Jianhua ^{[3
]}

Xu, H. Q. ^{[1
,2
]}

Chen, Qing ^{[1
,2
]}

机构：

[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 14期

关键词：

SEMICONDUCTOR; PERFORMANCE; DIAMETER; MOSFETS;

D O I：

10.1063/1.4897496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To suppress short channel effects, lower off-state leakage current and enhance gate coupling efficiency, InAs nanowires (NWs) with diameter smaller than 10 nm could be needed in field-effect transistors (FETs) as the channel length scales down to tens of nanometers to improve the performance and increase the integration. Here, we fabricate and study FETs based on ultrathin wurtzite-structured InAs NWs, with the smallest NW diameter being 7.2 nm. The FETs based on ultrathin NWs exhibit high I-on/I-off ratios of up to 2 x 10(8), small subthreshold swings of down to 120mV/decade, and operate in enhancement-mode. The performance of the devices changes as a function of the diameter of the InAs NWs. The advantages and challenges of the FETs based on ultrathin NWs are discussed. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 30 条

[1] Properties of InAs/InAlAs heterostructures [J].

Affentauschegg, C ;

Wieder, HH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (08) :708-714

[2] Toward Nanowire Electronics [J].

Appenzeller, Joerg ;

Knoch, Joachim ;

Bjoerk, Mikael I. ;

Riel, Heike ;

Schmid, Heinz ;

Riess, Walter .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) :2827-2845

[3] Doping Incorporation in InAs nanowires characterized by capacitance measurements [J].

Astromskas, Gvidas ;

Storm, Kristian ;

Karlstrom, Olov ;

Caroff, Philippe ;

Borgstrom, Magnus ;

Wernersson, Lars-Erik .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (05)

[4] Vertical III-V Nanowire Device Integration on Si(100) [J].

Borg, Mattias ;

Schmid, Heinz ;

Moselund, Kirsten E. ;

Signorello, Giorgio ;

Gignac, Lynne ;

Bruley, John ;

Breslin, Chris ;

Das Kanungo, Pratyush ;

Werner, Peter ;

Riel, Heike .

NANO LETTERS, 2014, 14 (04) :1914-1920

[5] Ballistic InAs Nanowire Transistors [J].

Chuang, Steven ;

Gao, Qun ;

Kapadia, Rehan ;

Ford, Alexandra C. ;

Guo, Jing ;

Javey, Ali .

NANO LETTERS, 2013, 13 (02) :555-558

[6]

Colinge JP, 2010, NAT NANOTECHNOL, V5, P225, DOI [10.1038/nnano.2010.15, 10.1038/NNANO.2010.15]

[7] Single InAs/GaSb Nanowire Low-Power CMOS Inverter [J].

Dey, Anil W. ;

Svensson, Johannes ;

Borg, B. Mattias ;

Ek, Martin ;

Wernersson, Lars-Erik .

NANO LETTERS, 2012, 12 (11) :5593-5597

[8] High-Performance InAs Nanowire MOSFETs [J].

Dey, Anil W. ;

Thelander, Claes ;

Lind, Erik ;

Dick, Kimberly A. ;

Borg, B. Mattias ;

Borgstrom, Magnus ;

Nilsson, Peter ;

Wernersson, Lars-Erik .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (06) :791-793

[9] Observation of Degenerate One-Dimensional Sub-Bands in Cylindrical In As Nanowires [J].

Ford, Alexandra C. ;

Kumar, S. Bala ;

Kapadia, Rehan ;

Guo, Jing ;

Javey, Ali .

NANO LETTERS, 2012, 12 (03) :1340-1343

[10] Diameter-Dependent Electron Mobility of InAs Nanowires [J].

Ford, Alexandra C. ;

Ho, Johnny C. ;

Chueh, Yu-Lun ;

Tseng, Yu-Chih ;

Fan, Zhiyong ;

Guo, Jing ;

Bokor, Jeffrey ;

Javey, Ali .

NANO LETTERS, 2009, 9 (01) :360-365

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