Optical-electronic simulation of a GaAs metal-semiconductor-metal (MSM) photodetectors

被引:0
|
作者
Korner, TO [1 ]
Yoder, PD [1 ]
Bomholt, LH [1 ]
Fichtner, W [1 ]
机构
[1] ETH ZURICH,INTEGRATED SYST LAB,CH-8092 ZURICH,SWITZERLAND
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:47 / 48
页数:2
相关论文
共 50 条
  • [21] High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes
    Yuang, RH
    Chien, YJ
    Shieh, JL
    Chyi, JI
    APPLIED PHYSICS LETTERS, 1996, 69 (02) : 245 - 247
  • [22] DARK CURRENT CHARACTERISTICS OF GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODETECTORS
    KOSCIELNIAK, WC
    PELOUARD, JL
    KOLBAS, RM
    LITTLEJOHN, MA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (07) : 1623 - 1629
  • [23] Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography
    Yu, ZN
    Schablitsky, SJ
    Chou, SY
    APPLIED PHYSICS LETTERS, 1999, 74 (16) : 2381 - 2383
  • [24] INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS FOR LONG WAVELENGTH OPTICAL COMMUNICATIONS
    SOOLE, JBD
    SCHUMACHER, H
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) : 737 - 752
  • [25] CARRIER TRAPPING IN ULTRAFAST METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON INGAAS/GAAS-ON-GAAS SUPERLATTICES
    HUGI, J
    HADDAB, Y
    SACHOT, R
    ILEGEMS, M
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1785 - 1794
  • [26] GaAs metal-semiconductor-metal Schottky microwave optical switches
    Zebentout, Abdel Djawad
    Aissat, Abdel Kader
    Bensaad, Zouaoui
    Zegaoui, Malek
    Pagies, Antoine
    Decoster, Didier
    OPTICS AND LASER TECHNOLOGY, 2013, 47 : 1 - 3
  • [27] Silicon nanowire metal-semiconductor-metal photodetectors
    Adachi, Michael M.
    Wang, Kai
    Chen, Feng
    Karim, Karim S.
    MEDICAL IMAGING 2010: PHYSICS OF MEDICAL IMAGING, 2010, 7622
  • [28] GaN and AlGaN metal-semiconductor-metal photodetectors
    Ferguson, I
    Tran, CA
    Karlicek, RF
    Feng, ZC
    Stall, R
    Liang, S
    Lu, Y
    Joseph, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 311 - 314
  • [29] The study of Pd Schottky contact on porous GaN for UV metal-semiconductor-metal (MSM) photodetectors
    Chuah, L. S.
    Hassan, Z.
    Abu Hassan, H.
    JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS, 2007, 16 (04) : 497 - 503
  • [30] Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors
    Chuang, Ricky Wenkuei
    Huang, Yu-Hsin
    Tsai, Tsung-Han
    MICROMACHINES, 2022, 13 (10)