Chalcogenide perovskites - an emerging class of ionic semiconductors

被引:239
作者
Perera, Samanthe [1 ]
Hui, Haolei [1 ,2 ]
Zhao, Chuan [1 ]
Xue, Hongtao [1 ]
Sun, Fan [1 ]
Deng, Chenhua [3 ]
Gross, Nelson [1 ]
Milleville, Chris [4 ]
Xu, Xiaohong [3 ]
Watson, David F. [4 ]
Weinstein, Bernard [1 ]
Sun, Yi-Yang [5 ]
Zhang, Shengbai [5 ]
Zeng, Hao [1 ]
机构
[1] Univ Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] Xi An Jiao Tong Univ, Sch Sci, Xian 710049, Peoples R China
[3] Shanxi Normal Univ, Key Lab Magnet Mol & Magnet Informat Mat, Sch Chem & Mat Sci, Minist Educ, Linfen 041004, Peoples R China
[4] Univ Buffalo, Dept Chem, Buffalo, NY 14260 USA
[5] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
基金
美国国家科学基金会;
关键词
Chalcogenide perovskite; Sulfurization; Band gap engineering; Ionic semiconductor; SEQUENTIAL DEPOSITION; SOLAR-CELL; RAMAN; LENGTHS; LIGHT; SCATTERING; SPECTRA;
D O I
10.1016/j.nanoen.2016.02.020
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the synthesis and characterization of a novel class of ionic semiconductor materials inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:129 / 135
页数:7
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