Interface structure of epitaxial polyethylene crystal grown on HOPG and MoS2 substrates

被引:64
作者
Takenaka, Y
Miyaji, H
Hoshino, A
Tracz, A
Jeszka, JK
Kucinska, I
机构
[1] Kyoto Univ, Grad Sch Sci, Dept Phys, Sakyo Ku, Kyoto 6068502, Japan
[2] Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland
关键词
D O I
10.1021/ma0485080
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
The interface structure of epitaxial polyethylene (PE) crystals was investigated using transmission electron diffraction (TED) and reflection high-energy electron diffraction (RHEED). The crystals were grown on highly oriented pyrolytic graphite (HOPG). The epitaxial growth of PE crystals on MoS2 was also investigated using the results of HOPG. It was found that PE crystallization on HOPG was epitaxial and that the monoclinic, not the orthorhombic, phase was formed at the interface. The monoclinic form was found to be stabilized at the interface due to the energy gain related to the matching of the crystalline lattices.
引用
收藏
页码:9667 / 9669
页数:3
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