Design and characterization of high optical quality InGaAs/GaAs/AlGaAs-based polariton microcavities

被引：8

作者：

Tinkler, L. ^{[1
]}

Walker, P. M. ^{[1
]}

Clarke, E. ^{[2
]}

Krizhanovskii, D. N. ^{[1
]}

Bastiman, F. ^{[2
]}

Durska, M. ^{[1
]}

Skolnick, M. S. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

SOLITONS; DEFECTS; GAAS; MBE;

D O I：

10.1063/1.4905907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The presence of dislocations arising from strain relaxation strongly affects polaritons through their photonic component and ultimately limits experiments involving polariton propagation. In this work, we investigate the range of growth parameters to achieve high optical quality GaAs/AlxGa1-xAs-based microcavities containing strained InxGa1-xAs quantum wells and using differential interference contrast (Nomarski) microscopy deduce a design rule for homogeneous versus disordered structures. We illustrate the effect of disorder by contrasting observations of polariton condensates in relaxed and unrelaxed microcavities. In our optimized device, we generate a polariton condensate and deduce a lifetime for the interacting polariton fluid of 39 +/- 2 ps. (C) 2015 AIP Publishing LLC.

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页数：4

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