The determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current-voltage characteristics

被引：0

作者：

Asimov, A. ^{[1
]}

Ahmetoglu , M. ^{[1
]}

机构：

[1] Uludag Univ, Fac Sci & Arts, Dept Phys, TR-16059 Gorukle, Bursa, Turkey

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2014年 / 8卷 / 9-10期

关键词：

Schottky barrier diode; Idealityfactor; Barrier height; Conducting polymers; MDMO-PPV; ELECTRICAL CHARACTERISTICS; BARRIER DIODES; THIN-FILM; JUNCTION; LAYER; PLOT;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current-voltage (I-V) characteristics of Al/MDMO-PPV/p-Si (111) Schottky barrier diodes (SBDs) have been investigated at room temperature. Here, (MDMO-PPV) poly-[2-(3,7-dimethyloctyloxy)-5-methyloxy]-para-phenylene-vinylene has been used as interfacial layer between metal and semiconductor layers. The characteristic parameters of the structure such as barrier height, ideality factor, interface states density and series resistance were determined from the electrical measurements. Also, Cheung functions and Norde method were used to evaluate the I-V characteristics and to obtain the characteristic parameters of the Schottky contact. The diode parameters such as ideality factor, barrier heights and interface state density, series resistance were found as 1,73-1,93 and 0,89-0,79 eV and 1,11x10(12) eV(-1) cm(-2) at (1,09-E-v) eV to 9,91x10(14) eV(-1) cm(-2) at (0,87-E-v) eV respectively. The series resistance R-s values were determined from dV/dIn I-I and H(I)-I plots and were found to be 9,2x10(3) k Omega and 10,1x10(3) k Omega respectively

引用

页码：975 / 979

页数：5

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