Theoretical investigation of performance in uniaxially- and biaxially-strained Si, SiGe and Ge double-gate p-MOSFETs

被引：0

作者：

Krishnamohan, Tejas ^{[1
,4
]}

Jungernann, Christoph ^{[2
]}

Kim, Donghyan ^{[1
]}

Ungersboeck, Enzo ^{[3
]}

Selberherr, Siegfried ^{[3
]}

Wong, Philip ^{[1
]}

Nishi, Yoshio ^{[1
]}

Saraswat, Krishna ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Univ Armed Forces, Munich, Germany

[3] TU Wien, Inst Microelect, Vienna, Austria

[4] Intel Corp, Santa Clara, CA 95054 USA

来源：

2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using the Non-local Empirical Pseudopotential method (bandstructure), Full-Band Monte-Carlo Simulations (transport), I-D Poisson-Schrodinger (electrostatics) and detailed Band-To-Band-Tunneling (BTBT) (including bandstructure and quanturn effects) simulations, the effect of uniaxial- and biaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, Si, SiGe and Ge, p-MOS DGFETs is thoroughly and systematically investigated.

引用

页码：681 / +

页数：3

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